IEC 62418:2010
Current
The latest, up-to-date edition.
Semiconductor devices - Metallization stress void test
Hardcopy , PDF
English - French
04-22-2010
FOREWORD
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation (resistance
change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration mechanism
Annex B (informative) - Technology-dependent factors for
aluminium
Annex C (informative) - Technology-dependent factors for
copper
Annex D (informative) - Precautions
Bibliography
IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.
| Committee |
TC 47
|
| DevelopmentNote |
Stability Date: 2020. (12/2017)
|
| DocumentType |
Standard
|
| Pages |
34
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Standards | Relationship |
| NF EN 62418 : 2011 | Identical |
| NBN EN 62418 : 2010 | Identical |
| NEN EN IEC 62418 : 2010 | Identical |
| I.S. EN 62418:2010 | Identical |
| PN EN 62418 : 2010 | Identical |
| BS EN 62418:2010 | Identical |
| CEI EN 62418 : 2011 | Identical |
| EN 62418:2010 | Identical |
| DIN EN 62418:2010-12 | Identical |
| UNE-EN 62418:2010 | Identical |
| BS IEC SRD 62913-2-4:2019 | Identical |
| IEC TS 62686-1:2015 | Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors |
| PD IEC/TS 62686-1:2015 | Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors |
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