IEC 62374-1:2010
Current
The latest, up-to-date edition.
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
Hardcopy , PDF
English, English - French
09-29-2010
FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation
for lifetime estimation
Bibliography
IEC 62374-1:2010 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
| Committee |
TC 47
|
| DevelopmentNote |
Stability Date: 2020. (09/2017)
|
| DocumentType |
Standard
|
| Pages |
36
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Standards | Relationship |
| NF EN 62374-1 : 2011 | Identical |
| NEN EN IEC 62374-1 : 2010 C11 2011 | Identical |
| I.S. EN 62374-1:2010 | Identical |
| BS EN 62374-1:2010 | Identical |
| CEI EN 62374-1 : 2012 | Identical |
| EN 62374-1:2010/AC:2011 | Identical |
| DIN EN 62374-1:2011-06 | Identical |
| UNE-EN 62374-1:2010 | Identical |
| IEC TS 62686-1:2015 | Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors |
| PD IEC/TS 62686-1:2015 | Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors |
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