IEC 60747-8-4:2004
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users
01-13-2014
English - French
09-24-2004
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FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
3.1 General terms
3.2 Equivalent circuit
3.3 Terms related to ratings and characteristics
3.4 Conventional used terms
4 Letter symbols
4.1 Additional general subscripts
4.2 List of additional letter symbols
5 Essential ratings and characteristics
5.1 General
5.2 Ratings (limiting values)
5.3 Characteristics
6 Measuring methods
6.1 General
6.2 Verification of ratings (limiting values)
6.3 Methods of measurement
7 Acceptance and reliability (revised from Clause 7 of
IEC 60747-8)
7.1 Endurance and reliability tests, and test methods
7.2 Type tests and routine tests
Bibliography
Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes:type B depletion (normally on) type and Type C enhancement (normally off) type.
| DevelopmentNote |
Stability Date: 2013. (10/2012)
|
| DocumentType |
Standard
|
| Pages |
121
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Superseded
|
| SupersededBy |
| Standards | Relationship |
| NEN IEC 60747-8-4 : 2004 | Identical |
| BS IEC 60747-8-4:2004 | Identical |
| IEC 60747-7:2010 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors |
| IEC PAS 62180:2000 | Electrostatic discharge (ESD) sensitivity testing machine model (MM) |
| IEC 60747-9:2007 | Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) |
| IEC 60747-8:2010 | Semiconductor devices - Discrete devices - Part 8: Field-effect transistors |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60747-2:2016 | Semiconductor devices - Part 2: Discrete devices - Rectifier diodes |
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