EN 62374:2007
Current
The latest, up-to-date edition.
Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films
10-19-2007
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
4.1 General
4.2 Test structure: capacitor structure
4.3 Area
5 Procedures
5.1 General
5.2 Pre-test
5.3 Test conditions
5.4 Criteria
6 Lifetime estimation
6.1 General
6.2 Acceleration model
6.3 A procedure for a lifetime estimation
7 Lifetime dependence on gate oxide area
Annex A (informative) - Supplementary determining test
condition and data analysis
Bibliography
Provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure
| Committee |
CLC/TC 47X
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Standards | Relationship |
| CEI EN 62374 : 2009 | Identical |
| NEN EN IEC 62374 : 2007 | Identical |
| UNE-EN 62374:2007 | Identical |
| NF EN 62374 : 2008 | Identical |
| DIN EN 62374:2008-02 | Identical |
| I.S. EN 62374:2007 | Identical |
| NBN EN 62374 : 2008 | Identical |
| BS EN 62374:2007 | Identical |
| IEC 62374:2007 | Identical |
| PN EN 62374 : 2007 | Identical |
| PNE-prEN 62374 | Identical |
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