CEI EN 60749-34 : 2012
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 34: POWER CYCLING
Hardcopy , PDF
English
01-01-2012
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FOREWORD
1 Scope and object
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Test conditions
7 Precautions
8 Measurements
9 Failure criteria
10 Summary
Bibliography
Describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors.
| Committee |
CT 309
|
| DevelopmentNote |
Classificazione CEI 47-88. (03/2012)
|
| DocumentType |
Standard
|
| Pages |
18
|
| PublisherName |
Comitato Elettrotecnico Italiano
|
| Status |
Current
|
| Standards | Relationship |
| EN 60749-34:2010 | Identical |
| IEC 60749-34:2010 | Identical |
| EN 60749-23:2004/A1:2011 | SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60749-3:2017 | Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination |
| EN 60749-3:2017 | Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination |
| IEC 60747-6:2016 | Semiconductor devices - Part 6: Discrete devices - Thyristors |
| IEC 60747-2:2016 | Semiconductor devices - Part 2: Discrete devices - Rectifier diodes |
| IEC 60749-23:2004+AMD1:2011 CSV | Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life |
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