BS EN 60749-34:2010
Current
The latest, up-to-date edition.
Semiconductor devices. Mechanical and climatic test methods Power cycling
Hardcopy , PDF
English
02-28-2011
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1 Scope and object
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Test conditions
7 Precautions
8 Measurements
9 Failure criteria
10 Summary
Bibliography
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications
Provides a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life. Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive.
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes 02/207672 DC. (10/2004) Supersedes 09/30209939 DC. (02/2011)
|
| DocumentType |
Standard
|
| Pages |
14
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive.
NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation.
| Standards | Relationship |
| UNE-EN 60749-34:2011 | Identical |
| NF EN 60749-34 : 2011 | Identical |
| DIN EN 60749-34:2011-05 | Identical |
| NBN EN 60749-34 : 2011 | Identical |
| I.S. EN 60749-34:2010 | Identical |
| EN 60749-34:2010 | Identical |
| IEC 60749-34:2010 | Identical |
| EN 60749-23:2004/A1:2011 | SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60749-3:2017 | Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination |
| EN 60749-3:2017 | Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination |
| IEC 60747-6:2016 | Semiconductor devices - Part 6: Discrete devices - Thyristors |
| IEC 60747-2:2016 | Semiconductor devices - Part 2: Discrete devices - Rectifier diodes |
| IEC 60749-23:2004+AMD1:2011 CSV | Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life |
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