IEC 62047-29:2017
Current
The latest, up-to-date edition.
Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
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English
22-11-2017
IEC 62047-29:2017(E) specifies a relaxation test method for measuring electromechanical properties of freestanding conductive thin films for micro-electromechanical systems (MEMS) under controlled strain and room temperature. Freestanding thin films of conductive materials are extensively utilized in MEMS, opto-electronics, and flexible/wearable electronics products. Freestanding thin films in the products experience external and internal stresses which could be relaxed even under room temperature during a period of operation, and this relaxation leads to time-dependent variation of electrical performances of the products. This test method is valid for isotropic, homogeneous, and linearly viscoelastic materials.
| Committee |
TC 47/SC 47F
|
| DevelopmentNote |
Stability Date: 2021. (11/2017)
|
| DocumentType |
Standard
|
| Pages |
12
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Standards | Relationship |
| BS IEC 62047-29:2017 | Identical |
| IEC 62047-2:2006 | Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials |
| IEC 62047-22:2014 | Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates |
| IEC 62047-8:2011 | Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films |
| IEC 62047-3:2006 | Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing |
| IEC 62047-21:2014 | Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials |
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