EN 62047-16:2015
Current
The latest, up-to-date edition.
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods
10-07-2015
FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Testing methods
Bibliography
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
| Committee |
CLC/TC 47X
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Standards | Relationship |
| CEI EN 62047-16 : 2016 | Identical |
| UNE-EN 62047-16:2015 | Identical |
| I.S. EN 62047-16:2015 | Identical |
| DIN EN 62047-16:2015-12 | Identical |
| PN EN 62047-16 : 2015 | Identical |
| IEC 62047-16:2015 | Identical |
| BS EN 62047-16:2015 | Identical |
| NBN EN 62047-16 : 2015 | Identical |
| NEN EN IEC 62047-16 : 2015 | Identical |
| NF EN 62047-16 : 2015 | Identical |
| PNE-FprEN 62047-16 | Identical |
| EN 62047-21:2014 | Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials |
| IEC 62047-21:2014 | Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials |
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