IEC 60747-8:2010
Current
The latest, up-to-date edition.
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users
English, English - French
15-12-2010
Important note : All end users must be registered with an Account prior to user licenses being assigned.
FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Letter symbols
5 Essential ratings and characteristics
6 Measuring methods
7 Acceptance and reliability
Bibliography
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
| Committee |
TC 47/SC 47E
|
| DevelopmentNote |
To be read in conjunction with IEC 60747-1. (12/2010) Supersedes IEC 60747-8-2, IEC 60747-8-3 & IEC 60747-8-4. (01/2014) Stability Date: 2018. (09/2017)
|
| DocumentType |
Standard
|
| Pages |
170
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Supersedes |
| Standards | Relationship |
| BS IEC 60747-8:2000 | Identical |
| NEN IEC 60747-8 : 2011 | Identical |
| IS 14901 : Part 8 : 2020 | Identical |
| NEN 10747-8 : 1985 | Identical |
| DIN IEC 60747-8:1989-08 | Identical |
| BS IEC 60747-8:2010 | Identical |
| BS 6493-1.8:1985 | Identical |
| NFC 96 008 : 1985 | Identical |
| 14/30311054 DC : 0 | BS EN 60747-4: AMD 1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS |
| BS IEC 60747-8-4:2004 | Discrete semiconductor devices Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications |
| CEI EN 60747-15 : 2012 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES |
| EN 60747-15:2012 | Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices |
| I.S. EN 60747-15:2012 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV)) |
| 01/206102 DC : DRAFT JUL 2001 | IEC 60747-8-12 ED.1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8-12: 8-12: METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS POWER SWITCHING APPLICATIONS |
| 07/30162213 DC : 0 | BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES |
| BS IEC 60747-4 : 2007 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS |
| BS EN 60747-15:2012 | Semiconductor devices. Discrete devices Isolated power semiconductor devices |
| IEC 60747-8-4:2004 | Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications |
| 04/30118741 DC : DRAFT AUG 2004 | IEC 60747-4 ED 2 - SEMICONDUCTOR DEVICES DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS |
| 04/30113287 DC : DRAFT MAY 2004 | IEC 60747-9 ED.2 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED GATE BIPOLAR TRANSISTORS (IGBTS) |
| 04/30114936 DC : DRAFT JUN 2004 | EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES |
| IEC 60747-4:2007+AMD1:2017 CSV | Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors |
| IEC 61747-1:1998+AMD1:2003 CSV | Liquid crystal and solid-state display devices - Part 1: Generic specification |
| 05/30135225 DC : DRAFT JUN 2005 | IEC 60749-9 ED 2 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) |
| BS QC 750000(1986) : 1986 | HARMONIZED SYSTEM OF QUALITY ASSESSMENT FOR ELECTRONIC COMPONENTS - DISCRETE SEMICONDUCTOR DEVICES - SECTIONAL SPECIFICATION |
| IEC 60747-15:2010 | Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices |
| IEC 60747-7:2010 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
| IEC 60747-2:2016 | Semiconductor devices - Part 2: Discrete devices - Rectifier diodes |
| IEC 60749-23:2004+AMD1:2011 CSV | Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.