BS EN 60749-8:2003

INTRODUCTION
1 Scope and object
2 Normative references
3 General terms
   3.1 Units of pressure
   3.2 Standard leak rate
   3.3 Measured leak rate
   3.4 Equivalent standard leak rate
4 Bomb pressure test
5 Fine leak detection: radioactive krypton method
   5.1 Object
   5.2 General description
   5.3 Personnel precautions
   5.4 Procedure
   5.5 Specified conditions
   5.6 Gross leak detection
6 Fine leak detection: tracer gas (helium) method
   with mass spectrometer
   6.1 General
   6.2 Method 1: specimens not filled with helium
       during manufacture - Fixed method
   6.3 Method 2: specimens not filled with helium
       during manufacture - Flexible method
   6.4 Method 3: specimens filled with helium
       during manufacture
   6.5 Gross leak detection
7 Gross leaks, perfluorocarbon - bubble detection method
   7.1 Object
   7.2 General description
   7.3 Test apparatus
   7.4 Test method
   7.5 Reject criterion
8 Gross leak - Perfluorocarbon - bubble detection method
9 Test condition E, weight-gain gross-leak detection
   9.1 Object
   9.2 Equipment
   9.3 Procedure
   9.4 Failure criteria
10 Penetrant dye gross leak detection
11 Gross leak re-test
Annex ZA (normative) Normative references to international
         publications with their corresponding European
         publications

Applies to semiconductor devices (discrete devices and integrated circuits). It determines the leak rate of semiconductor devices.

Applicable to semiconductor devices (discrete devices and integrated circuits), it determines the leak rate of semiconductor devices. The contents of the corrigenda of April 2003 and August 2003 have been included in this copy.