MIL-PRF-19500-765 Revision B:2016
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Dual Schottky, Common Cathode, Encapsulated (Through-Hole and Surface Mount), Type 1N7072 and 1N7078 Quality Levels JAN, JANTX, JANTXV, and JANS
English
14-03-2016
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters.
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a silicon, dual Schottky, center-tap, power
rectifier diode for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device.
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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