MIL-PRF-19500-732 Revision E:2016
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TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| Committee |
FSC 5961
|
| DocumentType |
Standard
|
| Pages |
26
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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