MIL-PRF-19500-652 Revision C:2013
Current
The latest, up-to-date edition.
Transistor, High Voltage, Field Effect, N-Channel, Silicon, Type 2N7387 and 2N7387U1, JAN, JANTX, JANTXV, and JANS
English
06-12-2013
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a high voltage N-channel, enhancement mode, power MOSFET transistor, with avalanche energy maximum ratings (E[AS]) and maximum avalanche current (I[AS]).
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a high voltage N-channel, enhancement-mode, power MOSFET transistor, with avalanche energy maximum ratings (Eas ) and maximum avalanche current (Ias). Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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