IEC 62047-21:2014
Current
The latest, up-to-date edition.
Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users
English - French
19-06-2014
FOREWORD
1 Scope
2 Normative references
3 Terms, definitions, symbols and designations
4 Test piece
5 Testing method and test apparatus
6 Test report
Annex A (informative) - Measurement example of Poisson's
ratio using type 1 test piece
Annex B (informative) - Analysis of test results obtained
from a type 2 test piece
Bibliography
IEC 62047-21:2014 specifies the determination of Poisson's ratio from the test results obtained by the application of uniaxial and biaxial loads to thin-film micro-electromechanical systems (MEMS) materials with lengths and widths less than 10 mm and thicknesses less than 10 µm.
| Committee |
TC 47/SC 47F
|
| DevelopmentNote |
Stability date: 2017. (06/2014)
|
| DocumentType |
Standard
|
| Pages |
26
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Standards | Relationship |
| NF EN 62047-21 : 2014 | Identical |
| NBN EN 62047-21 : 2014 | Identical |
| NEN EN IEC 62047-21 : 2014 | Identical |
| PN EN 62047-21 : 2014 | Identical |
| BS EN 62047-21:2014 | Identical |
| CEI EN 62047-21 : 2016 | Identical |
| EN 62047-21:2014 | Identical |
| DIN EN 62047-21:2015-04 | Identical |
| UNE-EN 62047-21:2014 | Identical |
| PNE-FprEN 62047-21 | Identical |
| BS EN 62047-16:2015 | Semiconductor devices. Micro-electromechanical devices Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods |
| IEC 62047-29:2017 | Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature |
| CEI EN 62047-16 : 2016 | SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS - WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS |
| IEC 62047-16:2015 | Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods |
| EN 62047-16:2015 | Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods |
| 14/30259233 DC : 0 | BS EN 62047-16 ED 1.0 - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS; WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS |
| I.S. EN 62047-16:2015 | SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS - WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS |
| ASTM E 132 : 2017 : REDLINE | Standard Test Method for Poisson’s Ratio at Room Temperature |
| IEC 62047-8:2011 | Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films |
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