IEC 60747-2:2016
Current
Current
The latest, up-to-date edition.
Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
Available format(s)
Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users
Language(s)
English - French
Published date
13-04-2016
Publisher
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IEC 60747-2:2016 provides standards for the following categories or sub-categories of rectifier diodes, including:
- line rectifier diodes;
- avalanche rectifier diodes;
- fast-switching rectifier diodes;
- Schottky barrier diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) Schottky barrier diodes and its properties are added;
b) Clauses 3, 4, 5 and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions;
c) Clause 6 was moved and added to Clause 7 of this third edition;
d) some parts of Clause 7 were moved and added to Clause 7 of this third edition;
e) Annex A was deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.
| DevelopmentNote |
Supersedes IEC 60147-2A, IEC 60147-0A, IEC 60147-2H, IEC 60147-0E, IEC 60147-1B, IEC 60147-2J, IEC 60147-2E and IEC 60147-1G (07/2004) To be used in conjunction with IEC 60747-1. Stability date: 2018. Supersedes IEC 60747-2-2. (04/2016)
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| DocumentType |
Standard
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| Pages |
91
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| PublisherName |
International Electrotechnical Committee
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| Status |
Current
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| Supersedes |
| Standards | Relationship |
| BS IEC 60747-2:2000 | Identical |
| BS 6493-1.2:1984 | Identical |
| BS EN 60747-2:2016 | Identical |
| NFC 96 002 : 2001 | Identical |
| DIN IEC 60747-2:2001-02 | Identical |
| NEN IEC 60747-2 : 2000 | Identical |
| BIS IS 14901-2 : 2001 | Identical |
| BS EN 62747:2014 | Terminology for voltage-sourced converters (VSC) for high-voltage direct current (HVDC) systems |
| BS EN 153000:1998 | Harmonized system of quality assessment for electronic components. Generic specification: discrete pressure contact power semiconductor devices (qualification approval) |
| 07/30161967 DC : 0 | BS EN 60747-8 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS |
| I.S. EN 60749-34:2010 | SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 34: POWER CYCLING |
| BS EN 60749-34:2010 | Semiconductor devices. Mechanical and climatic test methods Power cycling |
| BS IEC 60747-8-4:2004 | Discrete semiconductor devices Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications |
| IEC 60747-8-4:2004 | Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications |
| CEI EN 60747-15 : 2012 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES |
| I.S. EN 62751-1:2014 | POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS |
| IEC 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
| EN 153000:1998 | Generic specification: Discrete pressure contact power semiconductor devices (Qualification approval) |
| EN 60747-15:2012 | Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices |
| EN 62747:2014/AC:2015 | TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS (IEC 62747:2014) |
| EN 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
| EN 61643-321:2002 | Components for low-voltage surge protective devices - Part 321: Specifications for Avalanche Breakdown Diode (ABD) |
| BS EN 150009:1993 | Harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes |
| BS EN 150008:1993 | Harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes |
| I.S. EN 62747:2014-2015-10 | TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS |
| IEEE C62.42.3-2017 | IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junction |
| CEI EN 61643-341 : 2002 | COMPONENTS FOR LOW-VOLTAGE SURGE PROTECTIVE DEVICES - PART 341: SPECIFICATION FOR THYRISTOR SURGE SUPPRESSOR (TSS) |
| I.S. EN 60747-15:2012 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV)) |
| BS IEC 60747-9:2007 | Semiconductor devices. Discrete devices Insulated-gate bipolar transistors (IGBTs) |
| CEI EN 61643-321 : 2003 | COMPONENTS FOR LOW-VOLTAGE SURGE PROTECTIVE DEVICES - PART 321: SPECIFICATIONS FOR AVALANCHE BREAKDOWN DIODE (ABD) |
| IEC 60747-9:2007 | Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) |
| I.S. EN 153000:1998 | DISCRETE PRESSURE CONTACT POWER SEMICONDUCTOR DEVICES (QUALIFICATION APPROVAL) (GENERIC SPECIFICATION) |
| BS CECC50008(1992) : 1992 AMD 7698 | HARMONIZED SYSTEM OF QUALITY ASSESSMENT FOR ELECTRONIC COMPONENTS: BLANK DETAIL SPECIFICATION: AMBIENT RATED RECTIFIER DIODES |
| BS CECC50009(1992) : 1992 AMD 7699 | HARMONIZED SYSTEM OF QUALITY ASSESSMENT FOR ELECTRONIC COMPONENTS - BLANK DETAIL SPECIFICATION: CASE RATED RECTIFIER DIODES |
| 09/30209939 DC : 0 | BS EN 60749-34 - SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 34: POWER CYCLING |
| 01/206102 DC : DRAFT JUL 2001 | IEC 60747-8-12 ED.1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8-12: 8-12: METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS POWER SWITCHING APPLICATIONS |
| 07/30162213 DC : 0 | BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES |
| 12/30251416 DC : 0 | BS EN 62747 - TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HVDC SYSTEMS |
| BS EN 61643-321:2002 | Low voltage surge protective devices Specifications for avalanche breakdown diode (ABD) |
| CEI EN 60749-34 : 2012 | SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 34: POWER CYCLING |
| BS EN 62751-1:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems General requirements |
| BS EN 120000:1996 | Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices |
| BS EN 60747-15:2012 | Semiconductor devices. Discrete devices Isolated power semiconductor devices |
| I.S. EN 62751-2:2014 | POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS |
| 17/30343732 DC : 0 | BS EN 60747-9 - SEMICONDUCTOR DEVICES - PART 9: DISCRETE DEVICES - INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) |
| PD IEC/TR 60601-4-3:2015 | Medical electrical equipment Guidance and interpretation. Considerations of unaddressed safety aspects in the third edition of IEC 60601-1 and proposals for new requirements |
| IEC 60747-8:2010 | Semiconductor devices - Discrete devices - Part 8: Field-effect transistors |
| BS EN 62751-2:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems Modular multilevel converters |
| EN 61643-341:2001 | Components for low-voltage surge protective devices - Part 341: Specification for thyristor surge suppressors (TSS) |
| BS EN 61643-341:2001 | Low voltage surge protective devices Specification for thyristor surge suppressors (TSS) |
| BS IEC 60747-8:2000 | Discrete semiconductor devices and integrated circuits Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors. |
| 12/30253588 DC : 0 | BS EN 62751-2 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HVDC SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS |
| 04/30113287 DC : DRAFT MAY 2004 | IEC 60747-9 ED.2 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED GATE BIPOLAR TRANSISTORS (IGBTS) |
| 04/30114936 DC : DRAFT JUN 2004 | EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES |
| EN 62751-1:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 1: General requirements |
| EN 62751-2:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters |
| IEC 61643-321:2001 | Components for low-voltage surge protective devices - Part 321: Specifications for avalanche breakdown diode (ABD) |
| IEC 61747-1:1998+AMD1:2003 CSV | Liquid crystal and solid-state display devices - Part 1: Generic specification |
| UNE-EN 60749-34:2011 | Semiconductor devices - Mechanical and climatic test methods -- Part 34: Power cycling |
| IEC 62751-2:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters |
| 05/30135225 DC : DRAFT JUN 2005 | IEC 60749-9 ED 2 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) |
| 12/30252799 DC : 0 | BS EN 62751-1-1 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTERS (VSC) FOR HV DC SYSTEMS - PART 1: GENERAL REQUIREMENTS |
| BS QC 750000(1986) : 1986 | HARMONIZED SYSTEM OF QUALITY ASSESSMENT FOR ELECTRONIC COMPONENTS - DISCRETE SEMICONDUCTOR DEVICES - SECTIONAL SPECIFICATION |
| IEC 62751-1:2014+AMD1:2018 CSV | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 1: General requirements |
| IEC 61643-341:2001 | Components for low-voltage surge protective devices - Part 341: Specification for thyristor surge suppressors (TSS) |
| IEC 60747-15:2010 | Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
| IEC 60050-521:2002 | International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits |
| IEC 60749-23:2004+AMD1:2011 CSV | Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life |
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