BS EN 60747-5-3:2001
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Discrete semiconductor devices and integrated circuits. Optoelectronic devices Measuring methods
Hardcopy , PDF
30-06-2015
English
20-01-2003
Foreword
1 Scope
2 Normative references
3 Measuring methods for photoemitters
3.1 Luminous intensity of light-emitting diodes (I[v])
3.2 Radiant intensity of infrared-emitting diodes (I[e])
3.3 Peak-emission wavelength (lambda[p]), spectral
radiation bandwidth (deltalambda), and number of
longitudinal modes (n[m])
3.4 Emission source length and width and astigmatism
of a laser diode without pigtail
3.5 Half-intensity angle and misalignment angle of
a photoemitter
4 Measuring methods for photosensitive devices
4.1 Reverse current under optical radiation of
photodiodes including devices with or without
pigtails (I[R(H)] or I[R(E)]), and collector
current under optical radiation of phototransistors
(I[C(H)] or I[C(E)])
4.2 Dark current for photodiodes I[R] and dark currents
for phototransistors I[CEO], I[ECO], I[EBO]
4.3 Collector-emitter saturation voltage V[CE(sat)] of
phototransistors
5 Measuring methods for photocouplers
5.1 Current transfer ratio (h[F(ctr)])
5.2 Input-to-output capacitance (C[io])
5.3 Isolation resistance between input and output
(r[IO])
5.4 Isolation test
5.5 Partial discharges of photocouplers
5.6 Collector-emitter saturation voltage V[CE(sat)] of
a photocoupler
5.7 Switching times t[on], t[off] of a photocoupler
5.8 Peak off-state current (I[DRM])
5.9 Peak on-state voltage (V[TM])
5.10 DC off-state current (I[BD])
5.11 DC on-state voltage (V[T])
5.12 Holding current (I[H])
5.13 Critical rate of rise of off-state voltage (dV/dt)
5.14 Trigger input current (I[FT])
5.15 Testing methods of electrical rating for
phototriac coupler
Annex A (informative) Cross references index
Defines the measuring methods that applies to the optoelectronic devices, which are not intended to be used in the fibre optic systems or subsystems.
Committee |
EPL/47
|
DevelopmentNote |
To be read in conjunction with IEC 60747-1, IEC 62007-1 and IEC 62007-2 Renumbers and supersedes BS IEC 60747-5.3 2001 Version incorporates 13434 to BS IEC 60747-5.3 (01/2002) Supersedes 00/202969 DC (02/2003)
|
DocumentType |
Standard
|
Pages |
48
|
PublisherName |
British Standards Institution
|
Status |
Superseded
|
SupersededBy | |
Supersedes |
Standards | Relationship |
NF EN 60747-5-3 : 2001 AMD 1 2002 | Identical |
IEC 60747-5-3:1997+AMD1:2002 CSV | Identical |
SN EN 60747-5-3 : 2001 | Identical |
DIN EN 60747-5-3 : 2003 | Identical |
I.S. EN 60747-5-3:2001 | Identical |
EN 60747-5-3:2001/A1:2002 | Identical |
IEC 60270:2000+AMD1:2015 CSV | High-voltage test techniques - Partial discharge measurements |
IEC 60068-1:2013 | Environmental testing - Part 1: General and guidance |
IEC 62007-1:2015 | Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics |
EN 60068-1:2014 | Environmental testing - Part 1: General and guidance |
IEC 62007-2:2009 | Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods |
IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
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